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PD - 95823A
IRF6620
l
Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with Existing Surface Mount Techniques
HEXFET(R) Power MOSFET
VDSS
20V
RDS(on) max
2.7m@VGS = 10V 3.6m@VGS = 4.5V
Qg(typ.)
28nC
MX
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ SX ST MQ MX MT
DirectFET ISOMETRIC
Description
The IRF6620 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6620 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6620 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C PD @TC = 25C EAS IAR TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Power Dissipation Single Pulse Avalanche Energyd Avalanche CurrentA Linear Derating Factor Operating Junction and Storage Temperature Range
Max.
20 20 150 27 22 220 2.8 1.8 89 39 22 0.017 -40 to + 150
Units
V
A
g g
W mJ A W/C C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted
fj gj hj ij
Parameter
Typ.
--- 12.5 20 --- 1.0
Max.
45 --- --- 1.4 ---
Units
C/W
Notes through are on page 2
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1
4/2/04
IRF6620
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
20 --- --- --- 1.55 --- --- --- --- --- 110 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 16 2.1 2.8 --- -5.8 --- --- --- --- --- 28 9.5 3.5 8.8 6.2 12 16 18 80 20 6.6 4130 1160 560 --- --- 2.7 3.6 2.45 --- 1.0 150 100 -100 --- 42 --- --- --- --- --- --- --- --- --- --- --- --- --- pF VGS = 0V VDS = 10V = 1.0MHz ns nC nC VDS = 10V VGS = 4.5V ID = 22A See Fig. 17 S nA V
Conditions
VGS = 0V, ID = 250A
mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 27A e VGS = 4.5V, ID = 22A e V mV/C A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 10V, ID = 22A VDS = VGS, ID = 250A
VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5V e ID = 22A Clamped Inductive Load
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) c Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min.
--- --- --- --- ---
Typ. Max. Units
--- --- 0.8 23 13 3.5 A 220 1.0 35 20 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 22A, VGS = 0V e TJ = 25C, IF = 22A di/dt = 100A/s e
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. Starting TJ = 25C, L = 0.16mH, RG = 25, IAS = 22A. Pulse width 400s; duty cycle 2%. Surface mounted on 1 in. square Cu board.
Used double sided cooling, mounting pad. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermal couple mounted to top (Drain) of
part.
R is measured at TJ of approximately 90C.
2
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IRF6620
1000
TOP VGS 10V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V 2.7V
1000
TOP VGS 10V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V 2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.7V
1
2.7V 60s PULSE WIDTH Tj = 25C
60s PULSE WIDTH Tj = 150C
1 0.1 1 10 100
0.1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000.0
Fig 2. Typical Output Characteristics
1.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current ()
ID = 27A VGS = 10V
100.0
T J = 150C
10.0
1.0
T J = 25C
1.0
VDS = 10V 60s PULSE WIDTH
0.1 2.5 3.0 3.5 4.0 4.5 5.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
12 ID= 20A
VGS, Gate-to-Source Voltage (V)
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
10 8 6 4 2 0
VDS= 20V VDS= 10V
C, Capacitance (pF)
10000
Ciss
1000
Coss Crss
100 1 10 100
0
20
40
60
80
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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IRF6620
1000.0
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
100.0 T J = 150C 10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10 100sec 1 Tc = 25C Tj = 150C Single Pulse 0.1 0 1 10 1msec 10msec 100
1.0
T J = 25C VGS = 0V
0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
150 2.5
Fig 8. Maximum Safe Operating Area
120
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
2.0
90
ID = 250A
60
1.5
30
0 25 50 75 100 125 150
1.0 -75 -50 -25 0 25 50 75 100 125 150
T J , Junction Temperature (C)
T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
100
Fig 10. Threshold Voltage vs. Temperature
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05
1
0.02 0.01
J J 1 1
R1 R1 2
R2 R2
R3 R3 3
R4 R4 C 4
Ri (C/W)
1.28011 8.72556 21.75 13.251
i (sec)
0.000322 0.164798 2.2576 69
0.1
2
3
4
Ci= i/Ri Ci i/Ri
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.001 0.01 0.1 1 10 100
0.001 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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RDS(on), Drain-to -Source On Resistance ( m)
IRF6620
12
160
ID = 27A
10
EAS, Single Pulse Avalanche Energy (mJ)
120
ID 7.2A 8.4A BOTTOM 22A
TOP
8
6
80
4
T J = 125C
40
2
T J = 25C
0 2.0 4.0 6.0 8.0 10.0
0 25 50 75 100 125 150
VGS, Gate-to-Source Voltage (V)
Starting T J, Junction Temperature (C)
Fig 12. On-Resistance Vs. Gate Voltage
Fig 13c. Maximum Avalanche Energy Vs. Drain Current
15V
LD VDS
DRIVER
VDS
L
+
VDD -
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
0.01
Fig 13a. Unclamped Inductive Test Circuit
V(BR)DSS tp
Fig 14a. Switching Time Test Circuit
VDS
90%
10%
VGS
I AS
td(on)
tr
td(off)
tf
Fig 13b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
Fig 14b. Switching Time Waveforms
Id Vds Vgs
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15. Gate Charge Test Circuit
Fig 16. Gate Charge Waveform
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5
IRF6620
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode Inductor Current Inductor Curent Ripple 5%
Forward Drop
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFET Substrate and PCB Layout, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
1- Drain 2- Drain 3- Source 4- Source 5- Gate 6- Drain 7- Drain
6 3 5 4 7
1
2
6
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IRF6620
DirectFET Outline Dimension, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC MAX CODE MIN 6.35 A 6.25 5.05 B 4.80 3.95 C 3.85 0.45 D 0.35 0.72 E 0.68 0.72 F 0.68 1.42 G 1.38 0.84 H 0.80 0.42 J 0.38 K 0.88 1.01 2.41 L 2.28 0.70 M 0.59 0.08 N 0.03 IMPERIAL MIN 0.246 0.189 0.152 0.014 0.027 0.027 0.054 0.032 0.015 0.035 0.090 0.023 0.001 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.056 0.033 0.017 0.039 0.095 0.028 0.003
Note: Controlling dimensions are in mm
DirectFET Part Marking
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IRF6620
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6618). For 1000 parts on 7" reel, order IRF6618TR1 REEL DIMENSIONS TR1 OPTION (QTY 1000) STANDARD OPTION (QTY 4800) IMPERIAL IMPERIAL METRIC METRIC MIN MIN MAX CODE MAX MIN MIN MAX MAX A 12.992 6.9 N.C 330.0 177.77 N.C N.C N.C B 0.795 0.75 N.C 20.2 19.06 N.C N.C N.C C 0.504 0.53 0.50 12.8 13.5 0.520 12.8 13.2 D 0.059 0.059 N.C 1.5 1.5 N.C N.C N.C E 3.937 2.31 100.0 58.72 N.C N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 13.50 18.4 G 0.488 0.47 12.4 11.9 N.C 0.567 12.01 14.4 H 0.469 0.47 11.9 11.9 N.C 0.606 12.01 15.4
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.4/04
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